THE DYNAMICS OF GaAs/AlGaAs HETEROSTRUCTURE UNDER THE TRANSVERSE MAGNETIC FIELDS AND MICROWAVE IRRADIATIONS-Reference-Cited by-同舟云学术

THE DYNAMICS OF GaAs/AlGaAs HETEROSTRUCTURE UNDER THE TRANSVERSE MAGNETIC FIELDS AND MICROWAVE IRRADIATIONS

Published:2009-06-20 Issue:15 Volume:23 Page:3305-3315
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

YANG GUI¹,ZHAO HONG-WEI²,MENG HAO²,ZHOU SHI-PING²

Affiliation:

1. Institute of Electronic Science & Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, 310014, P.R. China

2. Department of Communication Engineering, Shanghai University, Shanghai 200444, P.R. China

Abstract

The numerical results of a set of nonlinear equations for a modulation-doped GaAs/AlGaAs heterostructure under external fields are presented. For pure dc bias at a fixed magnetic field, we observe the self-sustained oscillations due to the traveling high electric field domain in the system. Varying the magnetic field, the width of the domain and the oscillation amplitude will be changed. By imposing the microwave irradiation, the system shows frequency locking, quasiperiodicity, and chaos depending on the amplitude and the frequency of the microwave. It is shown that these interesting oscillations are connected with the high electric field domains.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979209052595

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