Stepwise ordering under nano-scale confinement in thin silica films

Author:

Pramanik Subrata1ORCID,Biswas Ripan Kumar12ORCID,Mukhopadhyay Mrinmay Kumar3ORCID,Ghosh Jiten1ORCID,Datta Alokmay4ORCID

Affiliation:

1. Materials Characterization Division, CSIR-Central Glass and Ceramic Research Institute, 196, Raja S.C. Mullick Road, Jadavpur, Kolkata 700032, India

2. Research Institute for Sustainable Energy (RISE), TCG Centres for Research and Education in Science and Technology (TCG CREST), Sector V, Salt Lake, Kolkata 700091, India

3. Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064, India

4. Department of Physics, University of Calcutta, 92, A.P.C. Roy Road, Kolkata 700009, India

Abstract

The phase transition from an amorphous 2D structure to a crystalline 3D structure under confinement is a fascinating and challenging problem in materials science and condensed matter physics. This work reports the Field Emission Scanning Electron Microscopy (FESEM) and energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), X-ray reflectivity (XRR), Fourier Transform Infrared Spectroscopy (FTIR) studies on pristine silica thin films. Silica was deposited on pristine Al (001) substrate (Alfa-Aesar) from tetraethyl orthosilicate (TEOS) precursor and thin films were spin-coated at different spinning frequencies under ambient conditions. The samples are highly porous and in-plane porosity varies from 30% to 60% as analyzed from both the FESEM and XRR and with increasing spinning frequency pores become more ordered. XRR shows that the samples are composed of two layers, a thick layer of aluminum oxide (Al2O3) as buffer layer and a layer of SiO2 on the top of the film. XRR shows sharp ordering rather than any layering. The film thickness varies from 90[Formula: see text]Å to 200[Formula: see text]Å and it shows a linear decay in the thickness of silica layer. In between 1000 and 1500[Formula: see text]rpm, XRR shows a sharp drop in the thickness of silica layer where thickness of this layer falls below the unit-cell dimension indicating higher-ordered crystallization under strained condition. XRD shows that there are no crystalline peaks coming from silica at lower rpm except the peaks of Al coming from the substrate. At 1000, 1200 and 1500[Formula: see text]rpm there is peak corresponding to the quartz, highly crystalline phase of SiO2 and where the substrate is slightly modified Al2O3. Reflection from (101) plane is prominent in all the films and it gives indication of formation 3D crystalline phase. Whereas FTIR shows that the Si–O stretching modes exhibit sharper and more defined reflectance peak compared to the broad bands observed in the samples in lower rpm. Observations suggest a clear indication of progressive ordering under confinement. To one extent, the results of XRR and FESEM will suggest the mechanism of transition from 2D amorphous to 3D crystalline phase under geometrical confinement effect and total confinement effect arising from thinning of the films with the increasing rpm, interfacial effect and on the other hand XRD and FTIR results will explain high ordering under confinement without any layering.

Publisher

World Scientific Pub Co Pte Ltd

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