THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS BY THE MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

Abstract

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.