PHENOMENA IN RESONANT TUNNELING THROUGH DEGENERATED ENERGY STATES WITH ELECTRON CORRELATION

Abstract

We introduce a general analysis method, which allows us to simulate the operation of high-performance molecular nano-devices and to design the expected function of a wide range of devices in nano-scale size. The method is based on the use of a resonant tunneling phenomenon, admitting strong electron correlation in a quantum dot with degenerated states. Three examples of the application of this method are given: Coulomb repulsion, uncorrelated resonant tunneling, and electron-phonon interaction. It is shown that there is a good agreement with experimental data in all three cases.