Optical and electronic properties of defect chalcopyrite ZnGa2S4
Author:
Affiliation:
1. Institute of Physics Ministry of Science and Education Republic of Azerbaijan Baku, AZ-1143, Azerbaijan
2. Azerbaijan State Oil and Industry University, Baku AZ 1010, Azerbaijan
3. Western Caspian University, Baku, AZ-1001, Azerbaijan
Abstract
Publisher
World Scientific Pub Co Pte Ltd
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979224500073
Reference38 articles.
1. Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4
2. High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4
3. Influence of spin–orbit interaction on band structure of TlInSe2
4. First-principle calculation of the electronic structure, DOS and effective mass TlInSe2
5. Enhancement of Mn red emission in CaGa2S4 compounds by co-doping rare-earth elements
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