Effect of double-constrained potential on the ground-state binding energy of magnetopolaron in a quantum well

Abstract

This study aims at investigating the properties of magnetopolarons (MPs) in III–V compound semiconductors: GaP, GaAs and GaSb crystals. The obtained results from numerical calculation revealed that absolute value of ground-state (GS) binding energy [Formula: see text] of the magnetopolaron is affected by magnetic field, type of crystal as well as the parabolic and asymmetric Gaussian potentials, which leads to a series of interesting phenomena. The study of results obtained provides a good theoretical guidance on optoelectronic devices and quantum information. We have theoretically investigated the origins of these strange phenomena, and our findings provide sound theoretical direction for photoelectric technology and quantum information.