MELTING CURVE OF SEMICONDUCTORS WITH DEFECTS: PRESSURE DEPENDENCE

Abstract

The high-pressure melting curve of semiconductors with defects has been studied using statistical moment method (SMM). In agreement with experiments and with DFT calculations we obtain a negative slope for the high-pressure melting curve. We have derived a new equation for the melting curve of the defect semiconductors. The melting was investigated at different high pressures, and the SMM calculated melting temperature of Si, AlP, AlAs and GaP crystals with defects being in good agreement with previous experiments.