Electrical conductivity and Einstein relation modeling in phosphorene

Abstract

Investigation on (2-dimensional) (2D) materials is growing significantly due to the fundamental electronic properties in the direct inherent bandgap, higher carrier mobility, and easier exfoliation. Phosphorene as a new 2D configuration has presented excellent potential in electronic and optoelectronic applications. In this study, the conductivity of monolayer phosphorene and Einstein’s relations as fundamental parameters in semiconductor manufacturing are analytically modeled. In addition, dependency of conductivity on normalized Fermi energy ([Formula: see text]) is demonstrated. According to the simulation results, conductivity and Einstein’s relation are completely dependent on temperature, therefore, rising up the temperature leads to conductivity and diffusion coefficient (Dn) growth. Indeed, conductivity is saturated when the normalized Fermi energy exceeds than 6. Also, the conductivity and Einstein’s relation dependency to voltage are studied. Results show that carrier conductivity and the electron diffusion coefficient (Dn) increase by amplifying the voltage.