Improved field electron emission behavior of ultrathin lanthanum hexaboride-coated copper oxide nanowires

Author:

Deore Amol B.1ORCID,Jagdale Aditya T.1ORCID,Mistari Chetan D.1ORCID,Jagtap Krishna1ORCID,Jadkar Sandesh R.1ORCID,More Mahendra A.1ORCID,Gadakh Sanjay R.2ORCID,Ueki Tomoyuki3,Koinkar Pankaj M.3ORCID

Affiliation:

1. Department of Physics, Savitribai Phule Pune University, Pune 411007, India

2. Department of Physics, K. T. H. M. College, Nashik 422002, Maharashtra, India

3. Graduate School of Technology, Industrial and Social Science, Tokushima University, Tokushima 770-8506, Japan

Abstract

A simple approach dealing with thermal oxidation at atmospheric pressure was used to synthesize copper oxide nanowires (CuO-NWs) on copper substrate. The vertically oriented CuO-NWs were used for further subjected to deposition of ultrathin layer (∼20[Formula: see text]nm) of lanthanum hexaboride (LaB[Formula: see text] using the electron beam evaporation technique. The observation of the characteristic vibrational mode of LaB6 in the Raman spectrum of LaB6-coated CuO-NWs (LaB6@CuO-NWs) revealed the existence of LaB6 in the deposited sample. Furthermore, confirmation of LaB6 coating on CuO-NWs was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. The field electron emission (FEE) characteristics of pristine CuO-NWs and LaB6@CuO-NWs were investigated in a planer diode geometry at a base pressure of [Formula: see text][Formula: see text]mbar. The values of turn-on and threshold fields (defined at emission current density of 1 and 10[Formula: see text][Formula: see text]A/cm2, respectively) were found to be 5.4[Formula: see text]V/[Formula: see text]m and 1.6[Formula: see text]V/[Formula: see text]m (for pristine CuO-NWs emitter) and 6.75, and 2.85[Formula: see text]V/[Formula: see text]m (for LaB6@CuO-NWs emitter). Interestingly, a noticeably large emission current density of [Formula: see text][Formula: see text][Formula: see text]A/cm2 has been extracted from the LaB6@CuO-NWs emitter at a relatively lower applied field of 5.8[Formula: see text]V/[Formula: see text]m. The Fowler–Nordheim (FN) plots of both the emitters showed nonlinear behavior, indicative of their semiconductive nature. Furthermore, both the emitters showed relatively stable emission behavior tested at a pre-set value of 1[Formula: see text][Formula: see text]A more than 3[Formula: see text]h. The enhanced FEE behavior of LaB6@CuO-NWs emitter is attributed to the modulation of electronic properties due to LaB6-CuO interface-induced effects. Although the promising FEE behavior of LaB6@CuO-NWs emitter warrants its potential for practical applications, further improvement can be achieved via fabricating an array emitter due to CuO NWS and optimizing the thickness of LaB6 coating.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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