INFLUENCE OF ION IMPLANTATION ON OXIDATION BEHAVIOR OF TiAl

Abstract

The influence of alloying elements on oxidation behavior of TiAl has been investigated using an ion-implantation technique and the mechanisms were discussed. The influence can be classified into several groups according to their effects. The implantation of β-forming elements, halogens, Cu and Zn results in a significant improvement of the oxidation behavior through formation of Al 2 O 3 layer in the initial stage of oxidation. The improvement by Zn is attributed to the formation of complex oxide of Zn and selective oxidation of Al beneath the layer. The implantation of Al , Si or P is also effective. On the other hand, implantation of Ag , Se and other several elements enhance the oxidation. The deterioration by Ag or Se is explained in terms of Al depletion in the implanted layer.