Investigation for AGZO RRAM using the RF Co-sputtering method

Abstract

Recently, the Internet of Things (IOT) has rapidly developed, leading to the development of many smart devices. Moreover, artificial intelligence (AI) and 5G communication are successful, and the demand for high-performance memory is increasing. The emerging nonvolatile RRAM has many advantages, such as low power consumption, fast operation speed, simple structure and excellent scalability, compared with traditional memories; this is promising for complex computing and mass storage. Zinc oxide (ZnO) is a promising candidate for transparent conducting oxide (TCO) applications because of its abundance, high conductivity, low toxicity, and cost-effectiveness. It is currently used in various optoelectronic components including thin-film transistors (TFTs) and photodetectors. Notably, TCO has been increasingly used in the switching layers of random resistive access memory systems. In this paper, we intend to combine AGO with a large energy gap and ZnO with a high conductivity to prepare AGZO as a switching layer for RRAM by co-sputtering. By adjusting the oxygen flow ratio and power of co-sputtering, the AGZO RRAM exhibited high performance with more than 1400 switching cycles, 102–103 on/off ratio, and low operation voltage, and high- and low-resistance states could be maintained for more than 10,000[Formula: see text]s.