Fabrication and application of two-dimensional tungsten disulfide thin film

Abstract

To form a tungsten disulfide film, a tungsten trioxide film is deposited first and then hydrogen sulfide is injected into the furnace tube to sulfide the tungsten trioxide film in a high-temperature environment. Due to the need to accurately control the thickness of tungsten trioxide, the power of the RF sputtering machine was reduced as much as possible in a stable condition in the experiment and the bias voltage during each process was monitored. In this experiment, a sapphire substrate and a silicon substrate with 200[Formula: see text]nm silicon dioxide are used. Then use optical instruments such as Raman optics, ellipsometers and high-resolution electron transmission microscopes, atomic force microscopes and other instruments for further measurement. The analysis results show that we have successfully made tungsten disulfide films of different thicknesses. Moreover, two-dimensional tungsten disulfide thin film has a response to light, gas and pH and related devices have been successfully fabricated in experiments. Among them, comparing the single-layer film and the double-layer film, the film quality of the double-layer film is better. The quality of the film grown on the sapphire substrate is also better than the quality of the film grown on the silicon dioxide substrate.