AlGaAs BELOW HALF BANDGAP: THE SILICON OF NONLINEAR OPTICAL MATERIALS-Reference-Cited by-同舟云学术

AlGaAs BELOW HALF BANDGAP: THE SILICON OF NONLINEAR OPTICAL MATERIALS

Published:1994-07 Issue:03 Volume:03 Page:347-371
ISSN:0218-8635
Container-title:Journal of Nonlinear Optical Physics & Materials
language:en
Short-container-title:J. Nonlinear Optic. Phys. Mat.

Author:

STEGEMAN G.I.¹,VILLENEUVE A.¹,KANG J.¹,AITCHISON J.S.²,IRONSIDE C.N.²,AL-HEMYARI K.²,YANG C.C.³,LIN C.-H.⁴,LIN H.-H.⁴,KENNEDY G.T.⁵,GRANT R.S.⁵,SIBBETT W.⁵

Affiliation:

1. CREOL, University of Central Florida, Orlando, FL 32826, USA

2. Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8QQ, UK

3. Dept. of Electrical and Computer Engineering, The Pennsylvania State University, University Park, PA 16802, USA

4. Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

5. Dept. of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, U.K.

Abstract

Very few nonlinear optical materials are actually useful for high throughput all-optical devices. However, AlGaAs does satisfy all of the nonlinear optical figures of merit when used with photons of energy less than one half the semiconductor bandgap. Here we review our measurements of the pertinent nonlinear coefficients in waveguides and various device applications to all-optical switching in the communications band around 1550 nm.

Publisher

World Scientific Pub Co Pte Lt

Subject

Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218199194000213

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