A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD-Reference-Cited by-同舟云学术

A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD

Published:2013-02 Issue:02 Volume:22 Page:1250088
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

BEN AMOR MERIAM¹,LOULOU MOURAD¹,QUINTANEL SEBASTIEN²,PASQUET DANIEL³

Affiliation:

1. Research Group on Electronics and Communication (EleCom), Laboratory of Electronics and Information, Technology (LETI), National Engineering School of Sfax, Tunisia

2. Circuits, Instrumentation and Electronic Modelling (ECIME), Laboratory ENSEA-UCP, Cergy, France

3. Microelectronics and Semiconductor Physics Laboratory (LaMIPS), NXP-CRISMAT-ENSICAEN, Caen, France

Abstract

In this paper we present the design of a fully integrated low noise amplifier for WiMAX standard with AMS 0.35 μm CMOS process. This LNA is designed to cover the frequency range for licensed and unlicensed bands of the WiMAX 2.3–5.9 GHz. The proposed amplifier achieves a wide band input and output matching with S11 and S22 lower than -10 dB, a flat gain of 12 dB and a noise figure around 3.5 dB for the entire band and from the upper to the higher frequencies. The presented wide band LNA employs a Chebyshev filter for input matching and an inductive shunt feedback for output matching with a bias current of 15 mA and a supply voltage of 2.5 V.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218126612500880

Reference15 articles.

1. Concurrent multiband low-noise amplifiers-theory, design, and applications

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