EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES

Abstract

The performances of proton irradiated silicon–germanium (SiGe) power heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature and high stage-temperature of 120°C with junction temperature over 160°C) are reported in this work. SiGe power HBTs with total emitter area of ~ 1460 μm2 are fabricated in a commercial BiCMOS process, and irradiated with proton at different fluences from 1 × 1012 p/cm2 to 5 × 1013 p/cm2. Experimental characterizations are conducted for pre- and post-radiation devices at room temperature, cryogenic temperature and high temperature. The results demonstrate that the proton-irradiated SiGe power HBTs are naturally suitable for electronic operations at extreme temperatures. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77 K) indicates a significant potential for space applications. In addition, SiGe power HBTs show better tolerance of proton radiation at high temperature of 120°C (junction temperature over 160°C). SiGe power HBTs demonstrate great potential in power amplification for wireless communication systems under severe radiation and extreme temperature environment (cryogenic and high temperatures) even without any intentional radiation hardening.