A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient-Reference-Cited by-同舟云学术

A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient

Published:2019-06-27 Issue:07 Volume:28 Page:1950120
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

Nagulapalli R.¹,Hayatleh K.¹^ORCID,Barker S.¹,Tammam A. A.¹,Georgiou P.²,Lidgey F. J.¹

Affiliation:

1. School of Engineering, Computing and Mathematics, Oxford Brookes University, Wheatley Campus, Wheatley, Oxford, OX33 1HX, UK

2. Electrical and Electronic Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK

Abstract

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65[Formula: see text]nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55[Formula: see text]V, and generates a 286[Formula: see text]mV reference voltage with a temperature coefficient of 59[Formula: see text]ppm/∘C. The circuit takes 413[Formula: see text]nA current from 0.55[Formula: see text]V supply and occupies 0.00986[Formula: see text]mm2 of active area.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218126619501202

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