A LOW-VARIATION NONLINEAR NEURON CIRCUIT
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Published:1998-08
Issue:04
Volume:08
Page:447-451
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ISSN:0218-1266
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Container-title:Journal of Circuits, Systems and Computers
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language:en
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Short-container-title:J CIRCUIT SYST COMP
Author:
DJAHANSHAHI HORMOZ1,
AHMADI MAJID1,
JULLIEN GRAHAM A.1,
MILLER WILLIAM C.1
Affiliation:
1. VLSI Research Group, University of Windsor, Windsor, Ontario N9B 3P4, Canada
Abstract
A resistive-type neuron circuit is presented that combines nonlinear characteristics of four MOS transistors to realize a saturating function. Despite circuit simplicity, characteristic variations are found to be small based on circuit analyses and fabrication measurements. Maximum variation between neurons within one chip is 1.3%, while worst-case chip-to-chip variation from 10 fabrications is 2.2%.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture
Cited by
1 articles.
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