High Performance CMOS Current Mirror Using Class-AB Level Shifted Bulk Driven Flipped Voltage Follower Cell

Abstract

This paper presents a novel current mirror structure based on level shifted class-AB flipped voltage follower cell, which operates at the supply voltage of 1.2[Formula: see text]V. The level shifted class-AB flipped voltage follower cell and regulated cascode structure are used at the input and the output stages to achieve low input resistance and very high output resistance, respectively. A comparison of performance parameters of the proposed current mirror with existing structures shows that the proposed current mirror has a very less current tracking error of 0.99%, high output resistance of 18.7[Formula: see text]M[Formula: see text], wide bandwidth of 239.245[Formula: see text]MHz and low power dissipation of 104[Formula: see text][Formula: see text]W. The proposed circuit has been simulated in Cadence virtuoso analog design environment and layout of the proposed circuit has been designed in Cadence virtuoso layout XL editor using BSIM3V3 180[Formula: see text]nm CMOS technology. The post-layout simulation results have also been presented to demonstrate the effectiveness of the proposed circuit.