MODELING THE OVERSHOOTING EFFECT OF MULTI-INPUT GATE IN NANOMETER TECHNOLOGIES

Abstract

With the advent of nanometer age in digital circuits, the overshooting time becomes an important component of gate delay for CMOS logic gates. However, there has been little attention paid to the research of the overshooting effect for multi-input gate in nanometer technologies until now. Therefore, in this paper, an effective model considering the overshooting effect of multi-input gate is presented. The experimental results using 32-nm PTM model reflect that the proposed model is accurate within 3.6% error compared with SPICE simulation results.