Author:
Wang Zijun,Zhou Pengcheng,Muecksch Frauke,Cho Alice,Tanfous Tarek Ben,Canis Marie,Witte Leander,Johnson Brianna,Raspe Raphael,Schmidt Fabian,Bednarski Eva,Silva Justin Da,Ramos Victor,Zong Shuai,Turroja Martina,Millard Katrina G.,Yao Kai-Hui,Shimeliovich Irina,Dizon Juan,Kaczynska Anna,Jankovic Mila,Gazumyan Anna,Oliveira Thiago Y.,Caskey Marina,Gaebler Christian,Bieniasz Paul D.,Hatziioannou Theodora,Nussenzweig Michel C.
Abstract
AbstractIndividuals that receive a 3rd mRNA vaccine dose show enhanced protection against severe COVID19 but little is known about the impact of breakthrough infections on memory responses. Here, we examine the memory antibodies that develop after a 3rd or 4th antigenic exposure by Delta or Omicron BA.1 infection, respectively. A 3rd exposure to antigen by Delta breakthrough increases the number of memory B cells that produce antibodies with comparable potency and breadth to a 3rd mRNA vaccine dose. A 4th antigenic exposure with Omicron BA.1 infection increased variant specific plasma antibody and memory B cell responses. However, the 4th exposure did not increase the overall frequency of memory B cells or their general potency or breadth compared to a 3rd mRNA vaccine dose. In conclusion, a 3rd antigenic exposure by Delta infection elicits strain-specific memory responses and increases in the overall potency and breadth of the memory B cells. In contrast, the effects of a 4th antigenic exposure with Omicron BA.1 is limited to increased strain specific memory with little effect on the potency or breadth of memory B cell antibodies. The results suggest that the effect of strain-specific boosting on memory B cell compartment may be limited.
Publisher
Cold Spring Harbor Laboratory