An N2-compatible Ni0 Metal–Organic Chemical Vapor Deposition (MOCVD) Precursor-Reference-Cited by-同舟云学术

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An N2-compatible Ni0 Metal–Organic Chemical Vapor Deposition (MOCVD) Precursor

Published:2015-06-05 Issue:6 Volume:44 Page:794-796
ISSN:0366-7022
Container-title:Chemistry Letters
language:en
Short-container-title:Chem. Lett.

Author:

Tran Viet-Ha¹²,Yatabe Takeshi¹²³,Matsumoto Takahiro¹²³,Nakai Hidetaka¹²³,Suzuki Kazuharu⁴,Enomoto Takao¹⁴,Ogo Seiji¹²³

Affiliation:

1. Center for Small Molecule Energy, Kyushu University

2. Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University

3. International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University

4. Specialty Chemicals Section, Technology Development, Technical Division, Tanaka Kikinzoku Kogyo K. K.

Publisher

The Chemical Society of Japan

Subject

General Chemistry

Link

http://www.journal.csj.jp/doi/pdf/10.1246/cl.150155

Reference34 articles.

1. Selective electroless nickel deposition on copper as a final barrier/bonding layer material for microelectronics applications

2. High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

3. Synthesis and Characterization of Ni and Ni/CrN Nanocomposite Coatings by Plasma Assisted Metal-Organic CVD

4. Effect of Annealing on the Magnetic and Magnetooptical Properties of Ni Films

5. Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal–organic chemical vapor deposition using a Ni(iPr-DAD)2precursor

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