Photoluminescent Properties ofp-GaAs/Electrolyte Interface. Evidence for Bandedge Shift during Photoelectrochemical Hydrogen Evolution Reaction
Author:
Publisher
The Chemical Society of Japan
Subject
General Chemistry
Reference15 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel Approaches for the Study of Surface Structure and Reactivity of Semiconductor Electrodes;Electrochemistry in Transition;1992
2. Surface States on Semiconductors;Modern Aspects of Electrochemistry;1992
3. Photoluminescence and impedance study of p-gallium arsenide/electrolyte interfaces under cathodic bias: evidence for flat-band potential shift during illumination and introduction of high-density surface states by platinum treatment;The Journal of Physical Chemistry;1989-08
4. Photoluminescence Proof of the Increase of Surface Recombination Velocity atp-GaAs Electrode by Pt Treatment;Chemistry Letters;1988-11-05
5. Photoluminescent properties ofp‐GaAs electrodes related to the ‘‘photocurrent anomaly’’: Determination of surface electron‐capture velocities and depletion widths in photoelectrochemical cells;Journal of Applied Physics;1987-12-15
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