A Simulated 45 nm MOSFET Channel Process in Transimpedance Amplifier Design for Optoelectronics Applications

Abstract

Abstract: A 45-nm metal-oxide-semiconductor field-effect transistor (MOSFET) channel process was simulated in transimpedance amplifier design performance for fiber optics and other major optoelectronics applications. Combined concepts of input stage feedforward followed by a current mirror stage with local active inductor feedback were introduced. The key advantages of this particular design are of great importance, especially in using a PMOS-based local active inductor (feedback formation) instead of a spiral inductor resulting in high transimpedance amplifier (TIA) gain as well as in extremely low power consumption. An overall TIA gain of 68.2 dBΩ was obtained with the f_(-3dB) bandwidth of 2.5 GHz, 0.555 mW of power consumption, and an input-referred noise current spectral density of 31.86 pA⁄√(H_z ) using a 1V DC budget supply. Keywords: Transimpdance, Optical preamplifier, Front-end amplifier, Fiber optic TIA. PACS: 85.40.-e, 07.50.Ek, 84.30.-r.