Technological parameters of thin-film pulsed laser scribing for perovskite photovoltaics

Abstract

Abstract Over the past decade, the power conversion efficiency of halide perovskite solar cells has shown a rapid increase to 26.1%. The significant efficiency growth and the relative simplification of the technology for obtaining thin-film solar cells due to liquid printing methods determine the high potential for the low-cost perovskite solar cells manufacturing. However, efficient use of cell geometry is comparable to the size of standard crystalline-Si wafers (156:156 mm and more). Therefore, modular geometry similar to amorphous-Si solar cell approaches is used to scale perovskite solar cells. Serial electrical connection of thin-film cells requires precise processing of the conductive layers that form the device p-i-n structure. The subject of research is the development of a full pulsed laser scribing cycle for inverted perovskite solar cells. In this work, we propose a study of a laser-patterning technology In2O3:SnO2 (ITO) conductive layer and a photoactive perovskite layer Cs0,2(CH(NH2)2)0,8PbI3. Process regimes of transparent conducting electrodes based on ITO and halide perovskite layer Cs0,2(CH(NH2)2)0,8PbI3 laser patterning were obtained. The optimal parameters for the multipass mode processing of ITO and perovskite layer were determined. The cell was electrically isolated at a scribe line width of 30 μm.