Multimodal Analysis of InAs/InGaAlAs Quantum Dots Using Transmission Electron Microscopy and Atom Probe Tomography
Author:
Affiliation:
1. Sony Semiconductor Solutions Corporation , Atsugi, Kanagawa , Japan
2. National Institute for Materials Science , Tsukuba, Ibaraki , Japan
3. National Institute of Information and Communications Technology , Koganei, Tokyo , Japan
Publisher
Oxford University Press (OUP)
Subject
Instrumentation
Link
https://academic.oup.com/mam/article-pdf/29/Supplement_1/1970/50931300/ozad067.1020.pdf
Reference7 articles.
1. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
2. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
3. Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate
4. Multidimensional quantum well laser and temperature dependence of its threshold current
5. Multiexciton Spectroscopy of a Single Self-Assembled Quantum Dot
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