Characterization of the Performance of a Thin Si-based Timepix3 Detector at 10–30 keV Electron Energies-Reference-Cited by-同舟云学术

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Characterization of the Performance of a Thin Si-based Timepix3 Detector at 10–30 keV Electron Energies

Published:2023-07-22 Issue:Supplement_1 Volume:29 Page:484-484
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Zhang Tianbi¹,Paton Kirsty A²,Britton T Ben¹

Affiliation:

1. Department of Materials Engineering, University of British Columbia , Vancouver, BC Canada

2. Scottish Universities Physics Alliance, School of Physics and Astronomy, University of Glasgow, UK; now with PSD Detector Group, Paul Scherrer Institut , Villigen PSI , Switzerland

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

https://academic.oup.com/mam/article-pdf/29/Supplement_1/484/50931812/ozad067.229.pdf

Reference7 articles.

1. Characterisation of a counting imaging detector for electron detection in the energy range 10–20keV

2. Direct detectors and their applications in electron microscopy for materials science

3. Direct Detection of Electron Backscatter Diffraction Patterns

4. Characterisation of a counting imaging detector for electron detection in the energy range 10–20keV

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