Memory that never forgets: emerging nonvolatile memory and the implication for architecture design-Reference-Cited by-同舟云学术

Memory that never forgets: emerging nonvolatile memory and the implication for architecture design

Published:2017-08-25 Issue:4 Volume:5 Page:577-592
ISSN:2095-5138
Container-title:National Science Review
language:en
Short-container-title:

Author:

Sun Guangyu¹,Zhao Jishen²,Poremba Matt³,Xu Cong⁴,Xie Yuan⁵

Affiliation:

1. Center for Energy-Efficient Computing and Applications, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

2. Department of Computer Engineering, University of California at Santa Cruz, Santa Cruz, CA 95064, USA

3. Advanced Micro Devices, Inc., Sunnyvale, CA 94085, USA

4. Hewlett Packard Lab, Palo Alto, CA 94304, USA

5. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, USA

Publisher

Oxford University Press (OUP)

Subject

Multidisciplinary

Link

http://academic.oup.com/nsr/article-pdf/5/4/577/25431276/nwx082.pdf

Reference94 articles.

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3. Full integration of highly manufacturable 512Mb PRAM based on 90nm technology;Oh,2006

4. Scaling analysis of phase-change memory technology;Pirovano,2003

5. Current status of the phase change memory and its future;Lai,2003

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