Xe precipitates at grain boundaries in Al under 1 MeV electron irradiation-Reference-Cited by-同舟云学术

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Xe precipitates at grain boundaries in Al under 1 MeV electron irradiation

Published:1999-01-01 Issue:5 Volume:48 Page:503-509
ISSN:0022-0744
Container-title:Journal of Electron Microscopy
language:en
Short-container-title:Journal of Electron Microscopy

Author:

Allen C. W.,Song M.,Furuya K.,Birtcher R. C.,Mitsuishi K.,Dahmen U.

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

http://academic.oup.com/jmicro/article-pdf/48/5/503/2650392/48-5-503.pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of carbon nitride compounds synthesised by co-implantation of 13C and 14N in copper at different temperatures;Materials Chemistry and Physics;2011-03

2. Precipitation behavior of Xe at grain boundaries in Si3N4 ceramic during implantation at elevated temperature;Journal of Nuclear Materials;2010-02

3. Nanoscale lead and noble gas inclusions in aluminum: Structures and properties;Microscopy Research and Technique;2004

4. A theoretical study of isomerism in doped aluminum MAl12 and MAl12X12 clusters with 40 and 50 valence electronsElectronic supplementary information (ESI) available: Selected geometric parameters of clusters. See http://www.rsc.org/suppdata/fd/b2/b211114d/;Faraday Discussions;2003

5. Determination of interfacial tensions for Xe nanoprecipitates in Al at 300 K;Philosophical Magazine Letters;2003-01

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