Quantitative and easy estimation of a crystal bending effect using low-order CBED patterns
Author:
Publisher
Oxford University Press (OUP)
Subject
Instrumentation
Link
http://academic.oup.com/jmicro/article-pdf/57/6/181/5856438/dfn019.pdf
Reference21 articles.
1. Determination of multiple lattice parameters from convergent-beam electron diffraction patterns
2. Dynamical diffraction effect on HOLZ-pattern geometry in Si-Ge alloys and determination of local lattice parameter
3. Quantitative determination of lattice parameters from CBED patterns: accuracy and performance
4. Analysis of Local Lattice Strain Around Oxygen Precipitates in Czochralski-Grown Silicon Wafers Using Convergent Beam Electron Diffraction
5. Using the Hough transform for HOLZ line identification in convergent beam electron diffraction
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4. Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns;Journal of Electron Microscopy;2010-05-19
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