Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope-Reference-Cited by-同舟云学术

Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope

Published:2020-12-12 Issue:3 Volume:70 Page:321-325
ISSN:2050-5698
Container-title:Microscopy
language:en
Short-container-title:

Author:

Ishida Takafumi¹²,Shinozaki Akira²,Kuwahara Makoto¹²,Miyoshi Toshinobu³,Saitoh Koh¹²,Arai Yasuo³

Affiliation:

1. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Nagoya, Chikusa 464-8601, Japan

2. Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, Chikusa 464-8601, Japan

3. Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan

Abstract

Abstract The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.

Funder

Japan Society for the Promotion of Science

Institute of Materials and Systems for Sustainability, Nagoya University

Publisher

Oxford University Press (OUP)

Subject

Radiology Nuclear Medicine and imaging,Instrumentation,Structural Biology

Link

http://academic.oup.com/jmicro/advance-article-pdf/doi/10.1093/jmicro/dfaa072/34556872/dfaa072.pdf

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