Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3substrate-Reference-Cited by-同舟云学术

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Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3substrate

Published:2013-10-09 Issue:1 Volume:63 Page:15-22
ISSN:2050-5698
Container-title:Microscopy
language:en
Short-container-title:Microscopy (Tokyo)

Author:

Park Jung Sik,Yang Jun-Mo,Park Kyung Jin,Park Yun Chang,Yoo Jung Ho,Jeong Chil Seong,Park Jucheol,He Yinsheng,Shin Keesam

Publisher

Oxford University Press (OUP)

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Structural Biology

Link

http://academic.oup.com/jmicro/article-pdf/63/1/15/5854663/dft040.pdf

Reference19 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure

3. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

4. III-Nitride multiwafer MOCVD systems for blue-green LED material

5. Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transmission Electron Microscopy Study of Selective Growth of GaN Rods on the Apex of GaN Stripes;Science of Advanced Materials;2017-05-01

2. Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes;International Journal of Photoenergy;2014

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