Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4

Author:

Wang Cong12,Xiao Rui-Chun3,Liu Huiying4,Zhang Zhaowei2,Lai Shen2,Zhu Chao5,Cai Hongbing2,Wang Naizhou2,Chen Shengyao6,Deng Ya5,Liu Zheng5,Yang Shengyuan A4,Gao Wei-Bo27

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology , Beijing 100029 , China

2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371 , Singapore

3. Institute of Physical Science and Information Technology, Anhui University , Hefei 230601 , China

4. Research Laboratory for Quantum Materials, Singapore University of Technology and Design , Singapore 487372 , Singapore

5. School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798 , Singapore

6. CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190 , China

7. The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University , Singapore 637371 , Singapore

Abstract

Abstract The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.

Funder

Singapore National Research Foundation

Singapore Ministry of Education

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Oxford University Press (OUP)

Subject

Multidisciplinary

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