Graphene binding on black phosphorus enables high on/off ratios and mobility

Author:

Lin Fanrong1,Cao Zhonghan2,Xiao Feiping3,Liu Jiawei2,Qiao Jiabin4,Xue Minmin1,Hu Zhili1,Liu Ying1,Lu Huan1,Zhang Zhuhua1,Martin Jens5,Tong Qingjun3,Guo Wanlin1,Liu Yanpeng1

Affiliation:

1. Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics , Nanjing 210016 , China

2. Centre for Advanced 2D Materials, National University of Singapore , Singapore 117546 , Singapore

3. School of Physics and Electronics, Hunan University , Changsha 410082 , China

4. Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology , Beijing 100081 , China

5. Leibniz Institute für Kristallzüchtung , Berlin 12489 , Germany

Abstract

ABSTRACT Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >103 as well as a mobility of ∼8000 cm2 V−1 s−1 at room temperature, meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Key Research and Development Program of China

National Key Research and Development Program of Ministry of Science and Technology of China

Fundamental Research Funds for the Central Universities

Science Fund for Distinguished Young Scholars of Hunan Province

State Key Laboratory of Mechanics and Control of Mechanical Structures

Postdoctoral Science Foundation of Jiangsu Province

Publisher

Oxford University Press (OUP)

Subject

Multidisciplinary

Reference51 articles.

1. Moore's law: the journey ahead;Lundstrom;Science,2022

2. International roadmap for devices and systems;Bresniker,2022

3. Graphene transistors;Schwierz;Nat Nanotechnol,2010

4. Self-heating in advanced CMOS technologies;Prasad,2017

5. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits;Roy;Proc IEEE,2003

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3