In Situ Cryogenic Cooling, Electric Biasing, and 4D-STEM of the 1T-TaS2 Charge Density Wave Transition-Reference-Cited by-同舟云学术

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In Situ Cryogenic Cooling, Electric Biasing, and 4D-STEM of the 1T-TaS2 Charge Density Wave Transition

Published:2024-07 Issue:Supplement_1 Volume:30 Page:
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Hart James L¹²,Siddique Saif¹,Schnitzer Noah¹,Funni Stephen¹,Kourkoutis Lena F³⁴,Cha Judy J¹

Affiliation:

1. Department of Materials Science and Engineering, Cornell University , Ithaca, NY , USA

2. Present address: Nova Research , Alexandria, VA , USA

3. School of Applied and Engineering Physics, Cornell University , Ithaca, NY , USA

4. Kavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, NY , USA

Publisher

Oxford University Press (OUP)

Link

https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.673/58639978/ozae044.673.pdf

Reference4 articles.

1. Atomic-Resolution Cryo-STEM Across Continuously Variable Temperatures

2. Scanning tunneling microscopy of the charge-density-wave structure in 1T-TaS2

3. In operando cryo-STEM of pulse-induced charge density wave switching in TaS2

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