In Situ Switching of van der Waals Ferroelectrics with In-Plane Electric Biasing-Reference-Cited by-同舟云学术

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In Situ Switching of van der Waals Ferroelectrics with In-Plane Electric Biasing

Published:2024-07 Issue:Supplement_1 Volume:30 Page:
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Li Xinyan¹,Shi Chuqiao¹,Mao Nannan²³,Kong Jing²,Ramesh Ramamoorthy¹,Han Yimo¹

Affiliation:

1. Department of Materials Science and NanoEngineering, Rice University , Houston, TX , United States

2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, MA , United States

3. Department of Chemical Engineering, Massachusetts Institute of Technology , Cambridge, MA , United States

Publisher

Oxford University Press (OUP)

Link

https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.782/58640909/ozae044.782.pdf

Reference5 articles.

1. Towards two-dimensional van der Waals ferroelectrics

2. Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics

3. Van der Waals force-induced intralayer ferroelectric-to-antiferroelectric transition via interlayer sliding in bilayer group-IV monochalcogenides

4. CalAtom: A software for quantitatively analysing atomic columns in a transmission electron microscope image

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