Analyzing Surface Relaxation in TEM-Lamella: A Method for Revealing Alloy Concentrations at Strained Semiconductor Interfaces
Author:
Affiliation:
1. Technische Universität Berlin, Institute of Optics and Atomic Physics , Berlin , Germany
Publisher
Oxford University Press (OUP)
Link
https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.142/58672581/ozae044.142.pdf
Reference5 articles.
1. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
2. Dynamical effects in strain measurements by dark-field electron holography
3. Three dimensional classification of dislocations from single projections
4. Double conical beam-rocking system for measurement of integrated electron diffraction intensities
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