InP HEMT Technology for High-Speed Logic and Communications
Author:
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of T-gate electrode on gate capacitance in In0.7Ga0.3As HEMTs;physica status solidi (c);2010-11-08
2. Materials and Technologies for III-V MOSFETs;Fundamentals of III-V Semiconductor MOSFETs;2010
3. Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors;Japanese Journal of Applied Physics;2009-04-20
4. Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach;Materials Science in Semiconductor Processing;2008-10
5. Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications;Materials Science in Semiconductor Processing;2008-10
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