Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Author:
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microstrip patch antenna with class-F load and DC block function for microwave power transfer;IEICE Electronics Express;2021-08-10
2. A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier;IEICE Transactions on Electronics;2011
3. Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method;IEEE Transactions on Microwave Theory and Techniques;2008-12
4. Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD;Solid-State Electronics;2008-05
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