Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
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Published:2008-05-01
Issue:5
Volume:E91-C
Page:683-687
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Transactions on Electronics
Author:
CHOI S. G.,BAEK Y. H.,OH J. H.,HAN M.,BANG S. H.,RHEE J.-K.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials