Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
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Published:2008-05-01
Issue:5
Volume:E91-C
Page:761-766
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Transactions on Electronics
Author:
SONG S.-H.,KIM J.-C.,JUNG S.-W.,JEONG Y.-H.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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