Observation of Positive Trap Charge by Electron Holography in PMOS Device

Author:

Wang Yun-Yu1,Sankaranarayanan Sandeep2,Kaushik Naveen1,Wang Zhouguang1,Smith Mike1,Jin Qiang1,Rossi Tommaso3

Affiliation:

1. Micron Technology Inc. , 8000 S Federal Way, Boise, ID 83716 , USA

2. Micron Technology Inc. , Road number 1, Financial District Nanakramguda, Hyderadad, Telangana State , India

3. Micron Technology Inc. , Via Trento n.26, Vimercate (MB), 20871 , Italy

Abstract

Abstract It has been hypothesized that trap charge plays an important role in PMOS (positive-channel metal oxide semiconductor) device reliability. By using electron holography, trap charge in a spacer oxide was observed to cause an inversion of junction in an un-stressed PMOS device prepared using a Ga+ focused ion beam (FIB). Through 400°C annealing for 10 min in vacuum, trap charge in the spacer oxide dispersed and the junction recovered. Technology computer-aided design (TCAD) simulation was used to confirm the positive trap charge effect on the junction. Furthermore, the simulation showed that a low concentration of positive trap charge at the Si/SiO2 interface under the spacer led to a higher tunneling current due to an abrupt junction near the Si surface through a very localized junction inversion.

Publisher

Oxford University Press (OUP)

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