Photoelectric characteristics of Si-photocetitors

Abstract

The work examines the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It has been established that ultrasonic irradiation increases the lifetime and diffusion length of carriers and, as a consequence, increases the efficiency of carrier collection at the electrical contacts of Si-n-p receivers. As a result of these processes, an increase in the short-circuit current is observed, which causes an increase in the open-circuit voltage of the Si-n-p structure operating in the photoconversion mode.