Piezocapacitance spectroscopy of a radiation defect in silicon

Abstract

In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy Ei = Ec − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60Co isotope and annealing the samples at 250°C on uniaxial compression was studied. It is shown that, under the action of pressure, Ei ΔEi changes depending on the crystallographic direction and reaches values of 0.06−0.12eB. A comparison is made with a similar effect for the level of the A-centre Ec − 0,17 eB.