Author:
Chakravarthy B.K.,Sree Lakshmi G.
Abstract
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and smaller passive components which result in higher power density. SiC devices have higher blocking voltages, lower on-state resistance and switching losses and higher thermal conductivity and operating temperatures. SiC devices can operate at higher voltages, higher frequencies and higher junction temperatures than comparable Si devices, which results in significant reduction in weight and size of the power converter and increase in system efficiency.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Study on Motor Structure with Boost Reactor Function;IEEJ Transactions on Fundamentals and Materials;2024-04-01
2. Application Readiness Map for WBG-Semiconductor-Based Applications;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04