Author:
Vetrova N. A.,Kuimov E. V.,Meshkov S. A.,Makeev M. O.,Sinyakin V. Yu.,Shasurin V. D.
Abstract
The problem of ensuring the operational parameters of composite multilayer semiconductor nanoscale structures at the design technology stages is solved. A mathematical model based on the physics of processes occurring in the structure during operation is developed. The problem is solved for the resonant-tunnelling AlGaAs nanoheterostructures.
Reference22 articles.
1. Mizuta H., Tanoue T., High-speed and functional applications of resonant tunnelling diodes. In The Physics and Applications of Resonant Tunnelling Diodes (New York: Cambridge university press), 133 (2006)
2. Wang J., Al-Khalidi A., Zhang C., Ofiare A., Wang L., Wasige E., Figueiredo J. M. L., Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter. In 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT) (Liverpool), 1 (2017)
3. Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200GHz