Investigation of Temperature Effects on the Characteristics of Bipolar Junction Transistor

Abstract

Temperature rise on the electronic board can have a noticeable impact on the electronic circuit which result in some changes in the basic parameters of the circuit elements. The aim of this paper is to study and analyzes the effects of high temperature on the static and dynamic characteristics of a bipolar transistor. The research was carried out experimentally by studying and analyzing several parameters of the NPN BJT transistor type 2SC2120 at different temperatures. The obtained results showed that there is a significant increase in collector current from 0.19 A to 0.23 A and current gain from 0.14 to 0.22 by increasing the temperature from 25°C to 130°C. As for the threshold voltage, it was found that its value decreased from 0.6 volts to 0.4 volts. The results obtained also indicate that for the dynamic properties, the diffusion capacitance of the emitter-base junction, increased from 10.1 nF to 45.02 nF by increasing the temperature up to 130°C. Finally, it was found that the reverse capacitance of the gate-drain junction increased from 41.4 pF to 47.3 pF under the same temperature ranges.