TRANSIENT ELECTRICAL PROPERTIES OF LOW ANGLE TILT BOUNDARIES IN GROWN GERMANIUM BICRYSTALS-Reference-Cited by-同舟云学术

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TRANSIENT ELECTRICAL PROPERTIES OF LOW ANGLE TILT BOUNDARIES IN GROWN GERMANIUM BICRYSTALS

Published:1983-09 Issue:C4 Volume:44 Page:C4-339-C4-343
ISSN:0449-1947
Container-title:Le Journal de Physique Colloques
language:
Short-container-title:J. Phys. Colloques

Author:

Broniatowski A.

Publisher

EDP Sciences

Subject

General Engineering

Link

http://jphyscol.journaldephysique.org/10.1051/jphyscol:1983440/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si;Journal of Electronic Materials;1996-07

2. The general relaxation time distribution of a logarithmic capacitance transient;Journal of Applied Physics;1990-04

3. Characterization of polycrystalline germanium by EBIC;Philosophical Magazine B;1988-06

4. Measurement of the grain-boundary states in semiconductors by deep-level transient spectroscopy;Physical Review B;1987-10-15

5. Characterization of interface defects in GaAs‐GaAlAs superlattices;Applied Physics Letters;1987-07-06

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