RECOVERY PROCESSES IN THE HIGH-TEMPERATURE DEFORMATION OF GERMANIUM, SILICON AND INDIUM ANTIMONIDE-Reference-Cited by-同舟云学术

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RECOVERY PROCESSES IN THE HIGH-TEMPERATURE DEFORMATION OF GERMANIUM, SILICON AND INDIUM ANTIMONIDE

Published:1983-09 Issue:C4 Volume:44 Page:C4-217-C4-225
ISSN:0449-1947
Container-title:Le Journal de Physique Colloques
language:
Short-container-title:J. Phys. Colloques

Author:

Siethoff H.

Publisher

EDP Sciences

Subject

General Engineering

Link

http://jphyscol.journaldephysique.org/10.1051/jphyscol:1983426/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiscale dislocation dynamics analyses of laser shock peening in silicon single crystals;International Journal of Plasticity;2006-12

2. Mechanics of shaped crystal growth from the melt;Journal of Materials Research;1996-09

3. A new regime of dynamic recovery in the high-temperature deformation of semiconductors;Philosophical Magazine A;1994-04

4. Plasticity of undoped GaAs deformed under liquid encapsulation;Journal of Applied Physics;1990-04-15

5. Dynamical Recovery of Cadmium, Zinc, and Magnesium at Intermediate Temperatures;physica status solidi (a);1986-03-16

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