COMPARISON OF ECL GATE PERFORMANCES USING DIFFERENT HETEROJUNCTION BIPOLAR TRANSISTORS PROCESS
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Published:1988-09
Issue:C4
Volume:49
Page:C4-575-C4-578
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ISSN:0449-1947
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Container-title:Le Journal de Physique Colloques
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language:
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Short-container-title:J. Phys. Colloques
Author:
DANGLA J.,HAVOND D.
Subject
General Engineering