PHOTOLUMINESCENCE DECAY IN a-Si : INFLUENCE OF EXCITATION DENSITY AND n-TYPE DOPING
-
Published:1981-10
Issue:C4
Volume:42
Page:C4-543-C4-546
-
ISSN:0449-1947
-
Container-title:Le Journal de Physique Colloques
-
language:
-
Short-container-title:J. Phys. Colloques
Author:
Czaja W.,Kinmond S.
Subject
General Engineering
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献